Ampoule sealing apparatus and process

An apparatus and process for sealing fused quartz ampoules housing a semiconductor growth charge under vacuum is described. An elongated fused quartz ampoule having an enlarged diameter open end and a reduced diameter closed end is vertically retained in a vacuum assembly. A semiconductor charge is disposed within the reduced diameter portion of the ampoule. A quartz plug of substantially the same diameter as the reduced diameter portion is suspended within the open and of the ampoule via a rotary vacuum feed. After evacuation of the ampoule a plug is lowered into the reduced diameter area and sealed therein while maintaining the vacuum on the ampoule. The charged ampoule area is then separated from the remaining structure by breaking along the scored line

Reusable thermal cycling clamp

A reusable metal clamp for retaining a fused quartz ampoule during temperature cycling in the range of 20 deg C to 1000 deg C is described. A compressible graphite foil having a high radial coefficient of thermal expansion is interposed between the fused quartz ampoule and metal clamp to maintain a snug fit between these components at all temperature levels in the cycle

Magnetometer with miniature transducer and automatic transducer scanning apparatus

Magnetometer is simple to operate and has fast response. Transducer is rugged and flat and can measure magnetic fields as close as 0.08 mm from any relatively flat surface. Magnetometer has active region of approximately 0.64 by 0.76 mm and is capable of good spatial resolution of magnetic fields as low as 0.02 Oe (1.6 A/m)

A magnetic field measurement technique using a miniature transducer

The development, fabrication, and application of a magnetometer are described. The magnetometer has a miniature transducer and is capable of automatic scanning. The magnetometer described here is capable of detecting static magnetic fields as low as 1.6 A/m and its transducer has an active area 0.64 mm by 0.76 mm. Thin and rugged, the transducer uses wire, 0.05 mm in diameter, which is plated with a magnetic film, enabling measurement of transverse magnetic fields as close as 0.08 mm from a surface. The magnetometer, which is simple to operate and has a fast response, uses an inexpensive clip-on milliammeter (commonly found in most laboratories) for driving and processing the electrical signals and readout. A specially designed transducer holding mechanism replaces the XY recorder ink pen; this mechanism provides the basis for an automatic scanning technique. The instrument has been applied to the measurements of magnetic fields arising from remanent magnetization in experimental plated-wire memory planes and regions of magnetic activity in geological rock specimens

Vapor phase growth of group 3, 4, and 5 compounds by HCl transport of elements

Technique has been devised for vapor-phase epitaxial growth of group 3, 4, and 5 binary, ternary, or quaternary compounds by HCl transport of the constituent elements or dopants. Technique uses all the constituents of the alloy system in their elemental form. Transport of these elements by an HCl + H2 carrier gas facilitates their transport as subchlorides

Temperature profiles in high gradient furnaces

Accurate temperature measurement of the furnace environment is very important in both the science and technology of crystal growth as well as many other materials processing operations. A high degree of both accuracy and precision is acutely needed in the directional solidification of compound semiconductors in which the temperature profiles control the freezing isotherm which, in turn, affects the composition of the growth with a concomitant feedback perturbation on the temperature profile. Directional solidification requires a furnace configuration that will transport heat through the sample being grown. A common growth procedure is the Bridgman Stockbarger technique which basically consists of a hot zone and a cold zone separated by an insulator. In a normal growth procedure the material, contained in an ampoule, is melted in the hot zone and is then moved relative to the furnace toward the cold zone and solidification occurs in the insulated region. Since the primary path of heat between the hot and cold zones is through the sample, both axial and radial temperature gradients exist in the region of the growth interface. There is a need to know the temperature profile of the growth furnace with the crystal that is to be grown as the thermal load. However it is usually not feasible to insert thermocouples inside an ampoule and thermocouples attached to the outside wall of the ampoule have both a thermal and a mechanical contact problem as well as a view angle problem. The objective is to present a technique of calibrating a furnace with a thermal load that closely matches the sample to be grown and to describe procedures that circumvent both the thermal and mechanical contact problems

Effects of 1- and 2-MeV electrons on photomultiplier tubes

Various types of photomultiplier tubes useful for space applications were irradiated with 1- and 2-MeV electrons at Van Allen radiation belt fluxes of 100,000 to 10 millions electrons/sq cm-sec. The increase in the dark current due to electron irradiation was observed at various bias voltages under worst-case conditions (no shielding). Results were presented in the form of dark current plotted against electron flux. All the tubes tested showed extremely large increases in dark current. Tube types 541A, 6217, 6199, and 6903 exhibited the largest increases under irradiation, whereas type 1P22 was affected the least. All the damage observed was transient. The luminescence produced in the optical window probably accounts for a large part of the dark-current increases, but there were some effects possibly due to direct irradiation of the photocathode and dynode chain

Radiographic instrumentation for DPM experiments

New developments in x-ray radiography that may be applicable to containerless experimentation are presented. The two features discussed are the use of radiography to determine the position and shape of the solid-liquid interface and, with the aid of appropriate markers, the flow patterns in either the surface or bulk of the liquid state. Both surface energy and fluid viscosity measurements can be made with the aid of the described radiographic system

Experiment requirements and implementation plan (Erip) for semiconductor materials growth in low-G environment

The MEA-2 A facility was used to test the effect of the low gravity environment on suppressing convective mixing in the growth of Pb(1-x)Sn(x)Te crystals. The need to eliminate convection, the furnace characteristics and operation that will be required for successful experimental implementation, and to the level that is presently known, the measured physical properties of the Pb(1-x)Sn(x)Te system were discussed. In addition, a brief background of the present and potential utilization of Pb(1-x)Sn(x)Te is given. Additional experiments are anticipated in future MEA-A, improved MEA and other dedicated materials processing in space flight apparatus

Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

Using the advanced technology developed to visualize the melt-solid interface in low Prandtl number materials, crystal growth rates and interface shapes have been measured in germanium and lead tin telluride semiconductors grown in vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations to determine interface shapes, to measure crystal growth rates, and to improve furnace and ampoule designs is demonstrated. The interface shapes observed in-situ, in real-time were verified by quenching and mechanically induced interface demarcation, and they were also confirmed using machined models to ascertain the absence of geometric distortions. Interface shapes depended upon the interface position in the furnace insulation zone, varied with the nature of the crystal being grown, and were dependent on the extent of transition zones at the ends of the ampoule. Actual growth rates varied significantly from the constant translation rate in response to the thermophysical properties of the crystal and its melt and the thermal conditions existing in the furnace at the interface. In the elemental semiconductor germanium the observed rates of crystal growth exceeded the imposed translation rate, but in the compound semiconductor lead tin telluride the observed rates of growth were less than the translation rate. Finally, the extent of ampoule thermal loading influenced the interface positions, the shapes, and the growth rates